RF electronics has been the major driver and first production relevant application for direct write e-beam lithography. Gate lengths below 100 nm can be produced with good process latitude and yield.
Relying on e-beam technology, GaAs and InP HEMTs deliver power gain cutoff frequencies well above 100 GHz. They are the crucial building blocks of advanced microwave monolithic integrated circuits (MMICs), being used in mobile telephone infrastructure and satellite communication systems.
xlith has exposed thousands of III/V-wafers (2-4 inch) with more than 100 different designs for advanced MMICs and discretes.
Industrial customers with internal e-beam capability rely on xlith as second source with excellent surge capacity.